Determination of bandgap states in p-type In[subscript 0.49]Ga[subscript 0.51]P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy

Determination of bandgap states in p-type In[subscript 0.49]Ga[subscript 0.51]P grown on SiGe/Si and GaAs by deep level optical spectroscopy and deep level transient spectroscopy

The presence and properties of traps in p-type In[subscript 0.49]Ga[subscript 0.51]P grown on low dislocation density, metamorphic Ge/SiGe/Si substrates and GaAs substrates were determined using deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) leading to the quanti...

Full description

Bibliographic Details
Main Authors: Gonzalez, Maria, Carlin, A. M., Dohrman, C. L., Ringel, S. A., Fitzgerald, Eugene A.
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: American Institute of Physics (AIP) 2013
Online Access:http://hdl.handle.net/1721.1/79619
https://orcid.org/0000-0002-1891-1959

Internet

http://hdl.handle.net/1721.1/79619
https://orcid.org/0000-0002-1891-1959

Similar Items