Conduction band discontinuity and electron confinement at the Si[subscript x]Ge[subscript 1−x]/Ge interface

Conduction band discontinuity and electron confinement at the Si[subscript x]Ge[subscript 1−x]/Ge interface

Germanium rich heterostructures can constitute a valid alternative to Silicon for the confinement of single electron spins. The conduction band discontinuity in SiGe/Ge heterostructures grown on pure germanium substrate is predicted to allow the confinement of electrons in the germanium, and the con...

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Bibliographic Details
Main Authors: Mazzeo, G., Yablonovitch, E., Jiang, H. W., Bai, Yu, Fitzgerald, Eugene A.
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: American Institute of Physics (AIP) 2013
Online Access:http://hdl.handle.net/1721.1/79623
https://orcid.org/0000-0002-1891-1959

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http://hdl.handle.net/1721.1/79623
https://orcid.org/0000-0002-1891-1959

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