Conduction band discontinuity and electron confinement at the Si[subscript x]Ge[subscript 1−x]/Ge interface
Germanium rich heterostructures can constitute a valid alternative to Silicon for the confinement of single electron spins. The conduction band discontinuity in SiGe/Ge heterostructures grown on pure germanium substrate is predicted to allow the confinement of electrons in the germanium, and the con...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2013
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| Online Access: | http://hdl.handle.net/1721.1/79623 https://orcid.org/0000-0002-1891-1959 |