The origins of pressure-induced phase transformations during the surface texturing of silicon using femtosecond laser irradiation

Surface texturing of silicon using femtosecond (fs) laser irradiation is an attractive method for enhancing light trapping, but the laser-induced damage that occurs in parallel with surface texturing can inhibit device performance. In this work, we investigate the light-material interaction during t...

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Main Authors: Smith, Matthew J., Sher, Meng-Ju, Franta, Benjamin, Lin, Yu-Ting, Mazur, Eric, Gradecak, Silvija
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: American Institute of Physics (AIP) 2013
Online Access:http://hdl.handle.net/1721.1/79627
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author Smith, Matthew J.
Sher, Meng-Ju
Franta, Benjamin
Lin, Yu-Ting
Mazur, Eric
Gradecak, Silvija
author2 Massachusetts Institute of Technology. Department of Materials Science and Engineering
author_facet Massachusetts Institute of Technology. Department of Materials Science and Engineering
Smith, Matthew J.
Sher, Meng-Ju
Franta, Benjamin
Lin, Yu-Ting
Mazur, Eric
Gradecak, Silvija
author_sort Smith, Matthew J.
collection MIT
description Surface texturing of silicon using femtosecond (fs) laser irradiation is an attractive method for enhancing light trapping, but the laser-induced damage that occurs in parallel with surface texturing can inhibit device performance. In this work, we investigate the light-material interaction during the texturing of silicon by directly correlating the formation of pressure-induced silicon polymorphs, fs-laser irradiation conditions, and the resulting morphology and microstructure using scanning electron microscopy, micro-Raman spectroscopy, and transmission electron microscopy. We show that raster scanning a pulsed laser beam with a Gaussian profile enhances the formation of crystalline pressure-induced silicon polymorphs by an order of magnitude compared with stationary pulsed fs-laser irradiation. Based on these observations, we identify resolidification-induced stresses as the mechanism responsible for driving sub-surface phase transformations during the surface texturing of silicon, the understanding of which is an important first step towards reducing laser-induced damage during the texturing of silicon with fs-laser irradiation.
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spelling mit-1721.1/796272022-09-26T12:03:17Z The origins of pressure-induced phase transformations during the surface texturing of silicon using femtosecond laser irradiation Smith, Matthew J. Sher, Meng-Ju Franta, Benjamin Lin, Yu-Ting Mazur, Eric Gradecak, Silvija Massachusetts Institute of Technology. Department of Materials Science and Engineering Smith, Matthew J. Gradecak, Silvija Surface texturing of silicon using femtosecond (fs) laser irradiation is an attractive method for enhancing light trapping, but the laser-induced damage that occurs in parallel with surface texturing can inhibit device performance. In this work, we investigate the light-material interaction during the texturing of silicon by directly correlating the formation of pressure-induced silicon polymorphs, fs-laser irradiation conditions, and the resulting morphology and microstructure using scanning electron microscopy, micro-Raman spectroscopy, and transmission electron microscopy. We show that raster scanning a pulsed laser beam with a Gaussian profile enhances the formation of crystalline pressure-induced silicon polymorphs by an order of magnitude compared with stationary pulsed fs-laser irradiation. Based on these observations, we identify resolidification-induced stresses as the mechanism responsible for driving sub-surface phase transformations during the surface texturing of silicon, the understanding of which is an important first step towards reducing laser-induced damage during the texturing of silicon with fs-laser irradiation. Chesonis Family Foundation National Science Foundation (U.S.) (Award CBET 0754227) National Science Foundation (U.S.) (Award CHE-DMR-DMS 0934480) National Science Foundation (U.S.). ERC–QESST (EEC-1041895) United States. Dept. of Defense (National Defense Science and Engineering Graduate Fellowship, 32 CFR 168a) R. J. McElroy Trust 2013-07-18T18:44:33Z 2013-07-18T18:44:33Z 2012-10 2012-07 Article http://purl.org/eprint/type/JournalArticle 00218979 1089-7550 http://hdl.handle.net/1721.1/79627 Smith, Matthew J., Meng-Ju Sher, Benjamin Franta, Yu-Ting Lin, Eric Mazur, and Silvija Gradečak. “The origins of pressure-induced phase transformations during the surface texturing of silicon using femtosecond laser irradiation.” Journal of Applied Physics 112, no. 8 (2012): 083518. © 2012 American Institute of Physics en_US http://dx.doi.org/10.1063/1.4759140 Journal of Applied Physics Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) MIT web domain
spellingShingle Smith, Matthew J.
Sher, Meng-Ju
Franta, Benjamin
Lin, Yu-Ting
Mazur, Eric
Gradecak, Silvija
The origins of pressure-induced phase transformations during the surface texturing of silicon using femtosecond laser irradiation
title The origins of pressure-induced phase transformations during the surface texturing of silicon using femtosecond laser irradiation
title_full The origins of pressure-induced phase transformations during the surface texturing of silicon using femtosecond laser irradiation
title_fullStr The origins of pressure-induced phase transformations during the surface texturing of silicon using femtosecond laser irradiation
title_full_unstemmed The origins of pressure-induced phase transformations during the surface texturing of silicon using femtosecond laser irradiation
title_short The origins of pressure-induced phase transformations during the surface texturing of silicon using femtosecond laser irradiation
title_sort origins of pressure induced phase transformations during the surface texturing of silicon using femtosecond laser irradiation
url http://hdl.handle.net/1721.1/79627
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