Correlating stress generation and sheet resistance in InAlN/GaN nanoribbon high electron mobility transistors

Correlating stress generation and sheet resistance in InAlN/GaN nanoribbon high electron mobility transistors

We report the nanoscale characterization of the mechanical stress in InAlN/GaN nanoribbon-structured high electron mobility transistors (HEMTs) through the combined use of convergent beam electron diffraction (CBED) and elastic mechanical modeling. The splitting of higher order Laue zone lines in CB...

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Bibliographic Details
Main Authors: Azize, Mohamed, Smith, Matthew J., Jones, Eric James, Palacios, Tomas, Gradecak, Silvija
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: American Institute of Physics (AIP) 2013
Online Access:http://hdl.handle.net/1721.1/79637
https://orcid.org/0000-0002-2190-563X

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http://hdl.handle.net/1721.1/79637
https://orcid.org/0000-0002-2190-563X

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