Ge-on-Si laser operating at room temperature

Monolithic lasers on Si are ideal for high-volume and large-scale electronic–photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide semiconductor technology. Recently we have demonstrated room-temperature phot...

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Bibliographic Details
Main Authors: Liu, Jifeng, Sun, Xiaochen, Kimerling, Lionel C., Michel, Jurgen, Camacho-Aguilera, Rodolfo Ernesto
Other Authors: MIT Materials Research Laboratory
Format: Article
Language:en_US
Published: Optical Society of America 2013
Online Access:http://hdl.handle.net/1721.1/79710
https://orcid.org/0000-0002-3913-6189