High phosphorous doped germanium: Dopant diffusion and modeling
The in situ n-type doping of Ge thin films epitaxial grown on Si substrates is limited to 1 × 10[superscript 19] cm[superscript −3] by the phosphorous out-diffusion during growth at 600 °C. By studying the phosphorous diffusion in Ge with different background doping, we find that the diffusion coeff...
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2013
|
| Online Access: | http://hdl.handle.net/1721.1/79725 https://orcid.org/0000-0002-3913-6189 |