High active carrier concentration in n-type, thin film Ge using delta-doping
We demonstrate CVD in situ doping of Ge by utilizing phosphorus delta-doping for the creation of a high dopant diffusion source. Multiple monolayer delta doping creates source phosphorous concentrations above 1 × 10[superscript 20]cm[superscript −3], and uniform activated dopant concentrations above...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Optical Society of America
2013
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| Online Access: | http://hdl.handle.net/1721.1/79734 https://orcid.org/0000-0002-3913-6189 |