Infrared absorption of n-type tensile-strained Ge-on-Si
We analyze the IR absorption of tensile-strained, n-type Ge for Si-compatible laser applications. A strong intervalley scattering from the indirect L valleys to the direct Γ valley in n[superscript +] Ge-on-Si is reported for the first time to our knowledge. The intervalley absorption edge is in goo...
| Main Authors: | , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Optical Society of America
2013
|
| Online Access: | http://hdl.handle.net/1721.1/79736 https://orcid.org/0000-0002-3913-6189 |