Infrared absorption of n-type tensile-strained Ge-on-Si

Infrared absorption of n-type tensile-strained Ge-on-Si

We analyze the IR absorption of tensile-strained, n-type Ge for Si-compatible laser applications. A strong intervalley scattering from the indirect L valleys to the direct Γ valley in n[superscript +] Ge-on-Si is reported for the first time to our knowledge. The intervalley absorption edge is in goo...

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Bibliographic Details
Main Authors: Wang, Xiaoxin, Li, Haofeng, Cai, Yan, Kimerling, Lionel C., Michel, Jurgen, Liu, Jifeng, Camacho-Aguilera, Rodolfo Ernesto
Other Authors: MIT Materials Research Laboratory
Format: Article
Language:en_US
Published: Optical Society of America 2013
Online Access:http://hdl.handle.net/1721.1/79736
https://orcid.org/0000-0002-3913-6189

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