Monolithically integrated, resonant-cavity-enhanced dual-band mid-infrared photodetector on silicon
In this paper, we present experimental demonstration of a resonant-cavity-enhanced mid-infrared photodetector monolithically fabricated on a silicon substrate. Dual-band detection at 1.6 μm and 3.7 μm is achieved within a single detector pixel without cryogenic cooling, by using thermally evaporated...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2013
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| Online Access: | http://hdl.handle.net/1721.1/79743 https://orcid.org/0000-0002-7233-3918 https://orcid.org/0000-0002-0769-0652 https://orcid.org/0000-0002-3913-6189 |