Monolithically integrated, resonant-cavity-enhanced dual-band mid-infrared photodetector on silicon
In this paper, we present experimental demonstration of a resonant-cavity-enhanced mid-infrared photodetector monolithically fabricated on a silicon substrate. Dual-band detection at 1.6 μm and 3.7 μm is achieved within a single detector pixel without cryogenic cooling, by using thermally evaporated...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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American Institute of Physics (AIP)
2013
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| Online Access: | http://hdl.handle.net/1721.1/79743 https://orcid.org/0000-0002-7233-3918 https://orcid.org/0000-0002-0769-0652 https://orcid.org/0000-0002-3913-6189 |
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| author | Wang, Jianfei Zens, Timothy Hu, Juejun Becla, Piotr Kimerling, Lionel C. Agarwal, Anuradha Murthy |
| author2 | MIT Materials Research Laboratory |
| author_facet | MIT Materials Research Laboratory Wang, Jianfei Zens, Timothy Hu, Juejun Becla, Piotr Kimerling, Lionel C. Agarwal, Anuradha Murthy |
| author_sort | Wang, Jianfei |
| collection | MIT |
| description | In this paper, we present experimental demonstration of a resonant-cavity-enhanced mid-infrared photodetector monolithically fabricated on a silicon substrate. Dual-band detection at 1.6 μm and 3.7 μm is achieved within a single detector pixel without cryogenic cooling, by using thermally evaporated nanocrystalline PbTe as the photoconductive absorbers. Excellent agreement between theory and experiment is confirmed. The pixel design can potentially be further extended to realizing multispectral detection. |
| first_indexed | 2024-09-23T10:54:50Z |
| format | Article |
| id | mit-1721.1/79743 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T10:54:50Z |
| publishDate | 2013 |
| publisher | American Institute of Physics (AIP) |
| record_format | dspace |
| spelling | mit-1721.1/797432022-09-30T23:51:58Z Monolithically integrated, resonant-cavity-enhanced dual-band mid-infrared photodetector on silicon Wang, Jianfei Zens, Timothy Hu, Juejun Becla, Piotr Kimerling, Lionel C. Agarwal, Anuradha Murthy MIT Materials Research Laboratory Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Microphotonics Center Wang, Jianfei Zens, Timothy Hu, Juejun Becla, Piotr Kimerling, Lionel C. Agarwal, Anuradha Murthy In this paper, we present experimental demonstration of a resonant-cavity-enhanced mid-infrared photodetector monolithically fabricated on a silicon substrate. Dual-band detection at 1.6 μm and 3.7 μm is achieved within a single detector pixel without cryogenic cooling, by using thermally evaporated nanocrystalline PbTe as the photoconductive absorbers. Excellent agreement between theory and experiment is confirmed. The pixel design can potentially be further extended to realizing multispectral detection. 2013-07-31T17:46:19Z 2013-07-31T17:46:19Z 2012-05 2012-04 Article http://purl.org/eprint/type/JournalArticle 00036951 1077-3118 http://hdl.handle.net/1721.1/79743 Wang, Jianfei, Timothy Zens, Juejun Hu, Piotr Becla, Lionel C. Kimerling, and Anuradha M. Agarwal. “Monolithically integrated, resonant-cavity-enhanced dual-band mid-infrared photodetector on silicon.” Applied Physics Letters 100, no. 21 (2012): 211106. © 2012 American Institute of Physics https://orcid.org/0000-0002-7233-3918 https://orcid.org/0000-0002-0769-0652 https://orcid.org/0000-0002-3913-6189 en_US http://dx.doi.org/10.1063/1.4722917 Applied Physics Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) MIT web domain |
| spellingShingle | Wang, Jianfei Zens, Timothy Hu, Juejun Becla, Piotr Kimerling, Lionel C. Agarwal, Anuradha Murthy Monolithically integrated, resonant-cavity-enhanced dual-band mid-infrared photodetector on silicon |
| title | Monolithically integrated, resonant-cavity-enhanced dual-band mid-infrared photodetector on silicon |
| title_full | Monolithically integrated, resonant-cavity-enhanced dual-band mid-infrared photodetector on silicon |
| title_fullStr | Monolithically integrated, resonant-cavity-enhanced dual-band mid-infrared photodetector on silicon |
| title_full_unstemmed | Monolithically integrated, resonant-cavity-enhanced dual-band mid-infrared photodetector on silicon |
| title_short | Monolithically integrated, resonant-cavity-enhanced dual-band mid-infrared photodetector on silicon |
| title_sort | monolithically integrated resonant cavity enhanced dual band mid infrared photodetector on silicon |
| url | http://hdl.handle.net/1721.1/79743 https://orcid.org/0000-0002-7233-3918 https://orcid.org/0000-0002-0769-0652 https://orcid.org/0000-0002-3913-6189 |
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