Monolithic Ge-on-Si lasers for integrated photonics

Monolithic Ge-on-Si lasers for integrated photonics

We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility of electrically pumped lasers.

Bibliographic Details
Main Authors: Liu, Jifeng, Sun, Xiaochen, Cai, Yan, Kimerling, Lionel C., Michel, Jurgen, Camacho-Aguilera, Rodolfo Ernesto
Other Authors: MIT Materials Research Laboratory
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers (IEEE) 2013
Online Access:http://hdl.handle.net/1721.1/79772
https://orcid.org/0000-0002-3913-6189

Internet

http://hdl.handle.net/1721.1/79772
https://orcid.org/0000-0002-3913-6189

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