Direct gap photoluminescence of n-type tensile-strained Ge-on-Si

Direct gap photoluminescence of n-type tensile-strained Ge-on-Si

Room temperature direct gap photoluminescence (PL) was observed from n-type tensile-strained epitaxial Ge-on-Si. The PL intensity increases with n-type doping due to a higher electron population in the direct Γ valley as a result of increased Fermi level. The direct gap emission also increases with...

Full description

Bibliographic Details
Main Authors: Sun, Xiaochen, Liu, Jifeng, Kimerling, Lionel C., Michel, Jurgen
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: American Physical Society 2013
Online Access:http://hdl.handle.net/1721.1/79793

Internet

http://hdl.handle.net/1721.1/79793

Similar Items