Direct gap photoluminescence of n-type tensile-strained Ge-on-Si
Room temperature direct gap photoluminescence (PL) was observed from n-type tensile-strained epitaxial Ge-on-Si. The PL intensity increases with n-type doping due to a higher electron population in the direct Γ valley as a result of increased Fermi level. The direct gap emission also increases with...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | en_US |
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American Physical Society
2013
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| Online Access: | http://hdl.handle.net/1721.1/79793 |
| _version_ | 1811079183927869440 |
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| author | Sun, Xiaochen Liu, Jifeng Kimerling, Lionel C. Michel, Jurgen |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Sun, Xiaochen Liu, Jifeng Kimerling, Lionel C. Michel, Jurgen |
| author_sort | Sun, Xiaochen |
| collection | MIT |
| description | Room temperature direct gap photoluminescence (PL) was observed from n-type tensile-strained epitaxial Ge-on-Si. The PL intensity increases with n-type doping due to a higher electron population in the direct Γ valley as a result of increased Fermi level. The direct gap emission also increases with temperature due to thermal excitation of electrons into the direct Γ valley, exhibiting robustness to heating effects. These unique properties of direct gap emission in an indirect gap material agree with our theoretical model and make Ge a promising light emitting material in 1550 nm communication band. |
| first_indexed | 2024-09-23T11:11:12Z |
| format | Article |
| id | mit-1721.1/79793 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T11:11:12Z |
| publishDate | 2013 |
| publisher | American Physical Society |
| record_format | dspace |
| spelling | mit-1721.1/797932022-10-01T01:54:00Z Direct gap photoluminescence of n-type tensile-strained Ge-on-Si Sun, Xiaochen Liu, Jifeng Kimerling, Lionel C. Michel, Jurgen Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Microphotonics Center Sun, Xiaochen Liu, Jifeng Michel, Jurgen Room temperature direct gap photoluminescence (PL) was observed from n-type tensile-strained epitaxial Ge-on-Si. The PL intensity increases with n-type doping due to a higher electron population in the direct Γ valley as a result of increased Fermi level. The direct gap emission also increases with temperature due to thermal excitation of electrons into the direct Γ valley, exhibiting robustness to heating effects. These unique properties of direct gap emission in an indirect gap material agree with our theoretical model and make Ge a promising light emitting material in 1550 nm communication band. United States. Air Force Office of Scientific Research (Multidisciplinary University Research Initiative) 2013-08-05T20:10:24Z 2013-08-05T20:10:24Z 2009-07 2009-02 Article http://purl.org/eprint/type/JournalArticle 00036951 http://hdl.handle.net/1721.1/79793 Sun, Xiaochen, Jifeng Liu, Lionel C. Kimerling, and Jurgen Michel. “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si.” Applied Physics Letters 95, no. 1 (2009): 011911. © 2009 American Institute of Physics. en_US http://dx.doi.org/10.1063/1.3170870 Applied Physics Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Physical Society MIT web domain |
| spellingShingle | Sun, Xiaochen Liu, Jifeng Kimerling, Lionel C. Michel, Jurgen Direct gap photoluminescence of n-type tensile-strained Ge-on-Si |
| title | Direct gap photoluminescence of n-type tensile-strained Ge-on-Si |
| title_full | Direct gap photoluminescence of n-type tensile-strained Ge-on-Si |
| title_fullStr | Direct gap photoluminescence of n-type tensile-strained Ge-on-Si |
| title_full_unstemmed | Direct gap photoluminescence of n-type tensile-strained Ge-on-Si |
| title_short | Direct gap photoluminescence of n-type tensile-strained Ge-on-Si |
| title_sort | direct gap photoluminescence of n type tensile strained ge on si |
| url | http://hdl.handle.net/1721.1/79793 |
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