In situ study of hydrogen silsesquioxane dissolution rate in salty and electrochemical developers
In order to better characterize the development of the electron-beam resist hydrogen silsesquioxane (HSQ), the authors used a quartz crystal microbalance (QCM) to study its rate of dissolution in situ. The authors determined the effect of both salt concentration and applied electric potential on the...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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American Vacuum Society
2013
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| Online Access: | http://hdl.handle.net/1721.1/79832 https://orcid.org/0000-0001-7453-9031 |
| _version_ | 1826212843263885312 |
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| author | Harry, Katherine J. Strobel, Sebastian Yang, Joel K. W. Duan, Huigao Berggren, Karl K. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Harry, Katherine J. Strobel, Sebastian Yang, Joel K. W. Duan, Huigao Berggren, Karl K. |
| author_sort | Harry, Katherine J. |
| collection | MIT |
| description | In order to better characterize the development of the electron-beam resist hydrogen silsesquioxane (HSQ), the authors used a quartz crystal microbalance (QCM) to study its rate of dissolution in situ. The authors determined the effect of both salt concentration and applied electric potential on the development rate of HSQ. The development rates were measured by spinning HSQ directly onto a quartz crystal resonator, and then developing in a QCM microfluidic module. In order to more directly observe the effect of electric potentials on the HSQ development rate, a film of HSQ was partially cross-linked in an O2 plasma asher and then developed in the QCM flow module with a salt-free NaOH solution. As the partially cross-linked HSQ slowly developed, electric potentials were applied and removed from the crystal allowing the observation of how the development rate increased upon the application of a positive electric potential. The increased development rate caused by both the addition of salt ions and a positive electric potential suggests that the rate may be limited by a build-up of negative charge on the HSQ. |
| first_indexed | 2024-09-23T15:39:20Z |
| format | Article |
| id | mit-1721.1/79832 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:39:20Z |
| publishDate | 2013 |
| publisher | American Vacuum Society |
| record_format | dspace |
| spelling | mit-1721.1/798322022-10-02T03:09:26Z In situ study of hydrogen silsesquioxane dissolution rate in salty and electrochemical developers Harry, Katherine J. Strobel, Sebastian Yang, Joel K. W. Duan, Huigao Berggren, Karl K. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Harry, Katherine J. Strobel, Sebastian Berggren, Karl K. In order to better characterize the development of the electron-beam resist hydrogen silsesquioxane (HSQ), the authors used a quartz crystal microbalance (QCM) to study its rate of dissolution in situ. The authors determined the effect of both salt concentration and applied electric potential on the development rate of HSQ. The development rates were measured by spinning HSQ directly onto a quartz crystal resonator, and then developing in a QCM microfluidic module. In order to more directly observe the effect of electric potentials on the HSQ development rate, a film of HSQ was partially cross-linked in an O2 plasma asher and then developed in the QCM flow module with a salt-free NaOH solution. As the partially cross-linked HSQ slowly developed, electric potentials were applied and removed from the crystal allowing the observation of how the development rate increased upon the application of a positive electric potential. The increased development rate caused by both the addition of salt ions and a positive electric potential suggests that the rate may be limited by a build-up of negative charge on the HSQ. National Science Foundation (U.S.) Massachusetts Institute of Technology. Materials Processing Center King Abdulaziz City of Science and Technology (Saudia Arabia) 2013-08-12T18:50:12Z 2013-08-12T18:50:12Z 2011 Article http://purl.org/eprint/type/JournalArticle 10711023 http://hdl.handle.net/1721.1/79832 Harry, Katherine J., Sebastian Strobel, Joel K. W. Yang, Huigao Duan, and Karl K. Berggren. In Situ Study of Hydrogen Silsesquioxane Dissolution Rate in Salty and Electrochemical Developers. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 29, no. 6 (2011): 06FJ01. https://orcid.org/0000-0001-7453-9031 en_US http://dx.doi.org/10.1116/1.3644339 Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Creative Commons Attribution-Noncommercial-Share Alike 3.0 http://creativecommons.org/licenses/by-nc-sa/3.0/ application/pdf American Vacuum Society Berggren via Amy Stout |
| spellingShingle | Harry, Katherine J. Strobel, Sebastian Yang, Joel K. W. Duan, Huigao Berggren, Karl K. In situ study of hydrogen silsesquioxane dissolution rate in salty and electrochemical developers |
| title | In situ study of hydrogen silsesquioxane dissolution rate in salty and electrochemical developers |
| title_full | In situ study of hydrogen silsesquioxane dissolution rate in salty and electrochemical developers |
| title_fullStr | In situ study of hydrogen silsesquioxane dissolution rate in salty and electrochemical developers |
| title_full_unstemmed | In situ study of hydrogen silsesquioxane dissolution rate in salty and electrochemical developers |
| title_short | In situ study of hydrogen silsesquioxane dissolution rate in salty and electrochemical developers |
| title_sort | in situ study of hydrogen silsesquioxane dissolution rate in salty and electrochemical developers |
| url | http://hdl.handle.net/1721.1/79832 https://orcid.org/0000-0001-7453-9031 |
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