In situ study of hydrogen silsesquioxane dissolution rate in salty and electrochemical developers
In order to better characterize the development of the electron-beam resist hydrogen silsesquioxane (HSQ), the authors used a quartz crystal microbalance (QCM) to study its rate of dissolution in situ. The authors determined the effect of both salt concentration and applied electric potential on the...
Main Authors: | Harry, Katherine J., Strobel, Sebastian, Yang, Joel K. W., Duan, Huigao, Berggren, Karl K. |
---|---|
Other Authors: | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
Format: | Article |
Language: | en_US |
Published: |
American Vacuum Society
2013
|
Online Access: | http://hdl.handle.net/1721.1/79832 https://orcid.org/0000-0001-7453-9031 |
Similar Items
-
Electrochemical development of hydrogen silsesquioxane by applying an electrical potential
by: Strobel, Sebastian, et al.
Published: (2012) -
Contrast enhancement behavior of hydrogen silsesquioxane in a salty developer
by: Nam, Sung-Wook, et al.
Published: (2012) -
Sub-5 keV electron-beam lithography in hydrogen silsesquioxane resist
by: Manfrinato, Vitor Riseti, et al.
Published: (2015) -
Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography
by: Berggren, Karl K., et al.
Published: (2012) -
Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist
by: Winston, Donald, et al.
Published: (2012)