Origins of Structural Hole Traps in Hydrogenated Amorphous Silicon

Origins of Structural Hole Traps in Hydrogenated Amorphous Silicon

The inherently disordered nature of hydrogenated amorphous silicon (a-Si:H) obscures the influence of atomic features on the trapping of holes. To address this, we have created a set of over two thousand ab initio structures of a-Si:H and explored the influence of geometric factors on the occurrence...

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Bibliographic Details
Main Authors: Johlin, Eric Carl, Wagner, Lucas K., Buonassisi, Tonio, Grossman, Jeffrey C.
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: American Physical Society 2013
Online Access:http://hdl.handle.net/1721.1/80776
https://orcid.org/0000-0003-1281-2359
https://orcid.org/0000-0001-8345-4937

Internet

http://hdl.handle.net/1721.1/80776
https://orcid.org/0000-0003-1281-2359
https://orcid.org/0000-0001-8345-4937

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