Light extraction in individual GaN nanowires on Si for LEDs
GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light extraction and improved internal quantum efficiency, respectively. In additio...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
SPIE
2013
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| Online Access: | http://hdl.handle.net/1721.1/80804 https://orcid.org/0000-0002-3852-3224 |