Light extraction in individual GaN nanowires on Si for LEDs
GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light extraction and improved internal quantum efficiency, respectively. In additio...
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| Format: | Article |
| Language: | en_US |
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SPIE
2013
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| Online Access: | http://hdl.handle.net/1721.1/80804 https://orcid.org/0000-0002-3852-3224 |
| _version_ | 1826211530338729984 |
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| author | Zhou, Xiang Chesin, Jordan Paul Gradecak, Silvija |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Zhou, Xiang Chesin, Jordan Paul Gradecak, Silvija |
| author_sort | Zhou, Xiang |
| collection | MIT |
| description | GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light extraction and improved internal quantum efficiency, respectively. In addition, GaN nanowires can be grown directly on Si substrates, providing an inexpensive and scalable platform for device fabrication. We use finite difference time domain photonic simulations to explore light extraction efficiency enhancement in GaN nanowire-based light-emitting diodes (LEDs) on Si. Emission polarization and the placement of the emission source along the length of the nanowire were taken into consideration. We find that the optimal placement of the emission source is determined by the light reflection at the nanowire-air and nanowire-substrate interfaces and the coupling of emitted radiation into the waveguided modes, resulting in extraction efficiencies of up to 50%. Our approach to optimizing light extraction via simulation techniques can be applied to more realistic large-scale devices to guide experimental work towards nanowire-based LEDs with potentially greater efficiencies than their thin-film counterparts. |
| first_indexed | 2024-09-23T15:07:27Z |
| format | Article |
| id | mit-1721.1/80804 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:07:27Z |
| publishDate | 2013 |
| publisher | SPIE |
| record_format | dspace |
| spelling | mit-1721.1/808042022-10-02T00:42:28Z Light extraction in individual GaN nanowires on Si for LEDs Zhou, Xiang Chesin, Jordan Paul Gradecak, Silvija Massachusetts Institute of Technology. Department of Materials Science and Engineering Chesin, Jordan Paul Zhou, Xiang Gradecak, Silvija GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light extraction and improved internal quantum efficiency, respectively. In addition, GaN nanowires can be grown directly on Si substrates, providing an inexpensive and scalable platform for device fabrication. We use finite difference time domain photonic simulations to explore light extraction efficiency enhancement in GaN nanowire-based light-emitting diodes (LEDs) on Si. Emission polarization and the placement of the emission source along the length of the nanowire were taken into consideration. We find that the optimal placement of the emission source is determined by the light reflection at the nanowire-air and nanowire-substrate interfaces and the coupling of emitted radiation into the waveguided modes, resulting in extraction efficiencies of up to 50%. Our approach to optimizing light extraction via simulation techniques can be applied to more realistic large-scale devices to guide experimental work towards nanowire-based LEDs with potentially greater efficiencies than their thin-film counterparts. 2013-09-19T13:32:09Z 2013-09-19T13:32:09Z 2012-10 Article http://purl.org/eprint/type/ConferencePaper 0277-786X http://hdl.handle.net/1721.1/80804 Chesin, Jordan, Xiang Zhou, and Silvija Gradečak. “Light extraction in individual GaN nanowires on Si for LEDs.” In Nanoepitaxy: Materials and Devices IV, edited by Nobuhiko P. Kobayashi, A. Alec Talin, and M. Saif Islam, 846703-846703-10. SPIE - International Society for Optical Engineering, 2012. © (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE) https://orcid.org/0000-0002-3852-3224 en_US http://dx.doi.org/10.1117/12.970456 Proceedings of SPIE--the International Society for Optical Engineering; v.8467 Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf SPIE SPIE |
| spellingShingle | Zhou, Xiang Chesin, Jordan Paul Gradecak, Silvija Light extraction in individual GaN nanowires on Si for LEDs |
| title | Light extraction in individual GaN nanowires on Si for LEDs |
| title_full | Light extraction in individual GaN nanowires on Si for LEDs |
| title_fullStr | Light extraction in individual GaN nanowires on Si for LEDs |
| title_full_unstemmed | Light extraction in individual GaN nanowires on Si for LEDs |
| title_short | Light extraction in individual GaN nanowires on Si for LEDs |
| title_sort | light extraction in individual gan nanowires on si for leds |
| url | http://hdl.handle.net/1721.1/80804 https://orcid.org/0000-0002-3852-3224 |
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