Direct-gap optical gain of Ge on Si at room temperature

Direct-gap optical gain of Ge on Si at room temperature

Lasers on Si are crucial components of monolithic electronic–photonic integration. Recently our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible with Si complementary metal oxide semiconductor technology, can be band engineered by tensile strain and n-type doping to...

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Bibliographic Details
Main Authors: Liu, Jifeng, Sun, Xiaochen, Kimerling, Lionel C., Michel, Jurgen
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: Optical Society of America 2013
Online Access:http://hdl.handle.net/1721.1/81205
https://orcid.org/0000-0002-3913-6189

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http://hdl.handle.net/1721.1/81205
https://orcid.org/0000-0002-3913-6189

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