Direct-gap optical gain of Ge on Si at room temperature
Lasers on Si are crucial components of monolithic electronic–photonic integration. Recently our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible with Si complementary metal oxide semiconductor technology, can be band engineered by tensile strain and n-type doping to...
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| Format: | Article |
| Language: | en_US |
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Optical Society of America
2013
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| Online Access: | http://hdl.handle.net/1721.1/81205 https://orcid.org/0000-0002-3913-6189 |
| _version_ | 1826202366217551872 |
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| author | Liu, Jifeng Sun, Xiaochen Kimerling, Lionel C. Michel, Jurgen |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Liu, Jifeng Sun, Xiaochen Kimerling, Lionel C. Michel, Jurgen |
| author_sort | Liu, Jifeng |
| collection | MIT |
| description | Lasers on Si are crucial components of monolithic electronic–photonic integration. Recently our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible with Si complementary metal oxide semiconductor technology, can be band engineered by tensile strain and n-type doping to achieve efficient light emission and optical gain from its direct gap transition. We report on what is to our knowledge the first experimental observation of optical gain in the wavelength range of 1600–1608 nm from the direct-gap transition of n+ tensile-strained Ge on Si at room temperature under steady-state optical pumping. This experimental result confirms that the band-engineered Ge on Si is a promising gain medium for monolithic lasers on Si. |
| first_indexed | 2024-09-23T12:06:19Z |
| format | Article |
| id | mit-1721.1/81205 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T12:06:19Z |
| publishDate | 2013 |
| publisher | Optical Society of America |
| record_format | dspace |
| spelling | mit-1721.1/812052022-09-28T00:10:20Z Direct-gap optical gain of Ge on Si at room temperature Liu, Jifeng Sun, Xiaochen Kimerling, Lionel C. Michel, Jurgen Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Microphotonics Center Liu, Jifeng Sun, Xiaochen Kimerling, Lionel C. Michel, Jurgen Lasers on Si are crucial components of monolithic electronic–photonic integration. Recently our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible with Si complementary metal oxide semiconductor technology, can be band engineered by tensile strain and n-type doping to achieve efficient light emission and optical gain from its direct gap transition. We report on what is to our knowledge the first experimental observation of optical gain in the wavelength range of 1600–1608 nm from the direct-gap transition of n+ tensile-strained Ge on Si at room temperature under steady-state optical pumping. This experimental result confirms that the band-engineered Ge on Si is a promising gain medium for monolithic lasers on Si. United States. Office of Naval Research (Multi University Research Initiative (MURI), Si-based Laser Initiative) 2013-09-26T20:03:57Z 2013-09-26T20:03:57Z 2009-05 2009-04 Article http://purl.org/eprint/type/JournalArticle 0146-9592 1539-4794 http://hdl.handle.net/1721.1/81205 Liu, Jifeng, Xiaochen Sun, Lionel C. Kimerling, and Jurgen Michel. “Direct-gap optical gain of Ge on Si at room temperature.” Optics Letters 34, no. 11 (May 29, 2009): 1738.© 2009 Optical Society of America. https://orcid.org/0000-0002-3913-6189 en_US http://dx.doi.org/10.1364/OL.34.001738 Optics Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Optical Society of America MIT web domain |
| spellingShingle | Liu, Jifeng Sun, Xiaochen Kimerling, Lionel C. Michel, Jurgen Direct-gap optical gain of Ge on Si at room temperature |
| title | Direct-gap optical gain of Ge on Si at room temperature |
| title_full | Direct-gap optical gain of Ge on Si at room temperature |
| title_fullStr | Direct-gap optical gain of Ge on Si at room temperature |
| title_full_unstemmed | Direct-gap optical gain of Ge on Si at room temperature |
| title_short | Direct-gap optical gain of Ge on Si at room temperature |
| title_sort | direct gap optical gain of ge on si at room temperature |
| url | http://hdl.handle.net/1721.1/81205 https://orcid.org/0000-0002-3913-6189 |
| work_keys_str_mv | AT liujifeng directgapopticalgainofgeonsiatroomtemperature AT sunxiaochen directgapopticalgainofgeonsiatroomtemperature AT kimerlinglionelc directgapopticalgainofgeonsiatroomtemperature AT micheljurgen directgapopticalgainofgeonsiatroomtemperature |