Direct-gap optical gain of Ge on Si at room temperature
Lasers on Si are crucial components of monolithic electronic–photonic integration. Recently our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible with Si complementary metal oxide semiconductor technology, can be band engineered by tensile strain and n-type doping to...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Optical Society of America
2013
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| Online Access: | http://hdl.handle.net/1721.1/81205 https://orcid.org/0000-0002-3913-6189 |