Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, resulting in sizable open-circuit voltage and efficiency enhancements. This work...

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Bibliographic Details
Main Authors: Heo, Jaeyeong, Siah, Sin Cheng, Kim, Sang Bok, Gordon, Roy G., Mailoa, Jonathan P, Brandt, Riley E, Buonassisi, Anthony, Lee, Yun Seog
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Royal Society of Chemistry 2013
Online Access:http://hdl.handle.net/1721.1/82121
https://orcid.org/0000-0003-2239-6192
https://orcid.org/0000-0003-2785-552X
https://orcid.org/0000-0001-8345-4937

Internet

http://hdl.handle.net/1721.1/82121
https://orcid.org/0000-0003-2239-6192
https://orcid.org/0000-0003-2785-552X
https://orcid.org/0000-0001-8345-4937

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