Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells
We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, resulting in sizable open-circuit voltage and efficiency enhancements. This work...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | en_US |
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Royal Society of Chemistry
2013
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| Online Access: | http://hdl.handle.net/1721.1/82121 https://orcid.org/0000-0003-2239-6192 https://orcid.org/0000-0003-2785-552X https://orcid.org/0000-0001-8345-4937 |
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| author | Heo, Jaeyeong Siah, Sin Cheng Kim, Sang Bok Gordon, Roy G. Mailoa, Jonathan P Brandt, Riley E Buonassisi, Anthony Lee, Yun Seog |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Heo, Jaeyeong Siah, Sin Cheng Kim, Sang Bok Gordon, Roy G. Mailoa, Jonathan P Brandt, Riley E Buonassisi, Anthony Lee, Yun Seog |
| author_sort | Heo, Jaeyeong |
| collection | MIT |
| description | We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, resulting in sizable open-circuit voltage and efficiency enhancements. This work emphasizes the importance of interface engineering in improving the performance of Earth-abundant solar cells. |
| first_indexed | 2024-09-23T13:49:13Z |
| format | Article |
| id | mit-1721.1/82121 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T13:49:13Z |
| publishDate | 2013 |
| publisher | Royal Society of Chemistry |
| record_format | dspace |
| spelling | mit-1721.1/821212022-09-28T16:22:14Z Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells Heo, Jaeyeong Siah, Sin Cheng Kim, Sang Bok Gordon, Roy G. Mailoa, Jonathan P Brandt, Riley E Buonassisi, Anthony Lee, Yun Seog Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Mechanical Engineering Massachusetts Institute of Technology. Laboratory for Manufacturing and Productivity Lee, Yun seog Siah, Sin Cheng Mailoa, Jonathan P. Brandt, Riley E. Buonassisi, Tonio We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, resulting in sizable open-circuit voltage and efficiency enhancements. This work emphasizes the importance of interface engineering in improving the performance of Earth-abundant solar cells. Chesonis Family Foundation MIT Energy Initiative (Robert Bosch GmbH) National Science Foundation (U.S.) (Award CBET-1032955) National Science Foundation (U.S.) (CAREER Award ECCS-1150878) National Science Foundation (U.S.) (Award DMR-0819762) National Science Foundation (U.S.). Graduate Research Fellowship Program 2013-11-15T15:52:10Z 2013-11-15T15:52:10Z 2013-04 2012-12 Article http://purl.org/eprint/type/JournalArticle 1754-5692 1754-5706 http://hdl.handle.net/1721.1/82121 Lee, Yun Seog, Jaeyeong Heo, Sin Cheng Siah, Jonathan P. Mailoa, Riley E. Brandt, Sang Bok Kim, Roy G. Gordon, and Tonio Buonassisi. “Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells.” Energy & Environmental Science 6, no. 7 (2013): 2112. © Royal Society of Chemistry https://orcid.org/0000-0003-2239-6192 https://orcid.org/0000-0003-2785-552X https://orcid.org/0000-0001-8345-4937 en_US http://dx.doi.org/10.1039/c3ee24461j Energy & Environmental Science Article is available under a Creative Commons license http://creativecommons.org/ application/pdf Royal Society of Chemistry RSC |
| spellingShingle | Heo, Jaeyeong Siah, Sin Cheng Kim, Sang Bok Gordon, Roy G. Mailoa, Jonathan P Brandt, Riley E Buonassisi, Anthony Lee, Yun Seog Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells |
| title | Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells |
| title_full | Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells |
| title_fullStr | Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells |
| title_full_unstemmed | Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells |
| title_short | Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells |
| title_sort | ultrathin amorphous zinc tin oxide buffer layer for enhancing heterojunction interface quality in metal oxide solar cells |
| url | http://hdl.handle.net/1721.1/82121 https://orcid.org/0000-0003-2239-6192 https://orcid.org/0000-0003-2785-552X https://orcid.org/0000-0001-8345-4937 |
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