Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells
We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, resulting in sizable open-circuit voltage and efficiency enhancements. This work...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Royal Society of Chemistry
2013
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| Online Access: | http://hdl.handle.net/1721.1/82121 https://orcid.org/0000-0003-2239-6192 https://orcid.org/0000-0003-2785-552X https://orcid.org/0000-0001-8345-4937 |