Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO[subscript 2] Resists
To address the incompatibility of organic semiconductors with traditional photolithography, an inert, frozen CO[subscript 2] resist is demonstrated that forms an in situ shadow mask. Contact with a room-temperature micro-featured stamp is used to pattern the resist. After thin film deposition, the r...
| Main Authors: | , , , , |
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| 其他作者: | |
| 格式: | 文件 |
| 语言: | en_US |
| 出版: |
Wiley Blackwell
2013
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| 在线阅读: | http://hdl.handle.net/1721.1/82881 https://orcid.org/0000-0003-2201-5257 |
| 总结: | To address the incompatibility of organic semiconductors with traditional photolithography, an inert, frozen CO[subscript 2] resist is demonstrated that forms an in situ shadow mask. Contact with a room-temperature micro-featured stamp is used to pattern the resist. After thin film deposition, the remaining CO[subscript 2] is sublimed to lift off unwanted material. Pixel densities of 325 pixels-per-inch are shown. |
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