Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO[subscript 2] Resists

To address the incompatibility of organic semiconductors with traditional photolithography, an inert, frozen CO[subscript 2] resist is demonstrated that forms an in situ shadow mask. Contact with a room-temperature micro-featured stamp is used to pattern the resist. After thin film deposition, the r...

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Main Authors: Mendoza, Hiroshi A., Ashall, Daniel T., Yin, Allen S., Baldo, Marc A., Bahlke, Matthias Erhard
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Wiley Blackwell 2013
Online Access:http://hdl.handle.net/1721.1/82881
https://orcid.org/0000-0003-2201-5257
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author Mendoza, Hiroshi A.
Ashall, Daniel T.
Yin, Allen S.
Baldo, Marc A.
Bahlke, Matthias Erhard
author2 Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
author_facet Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Mendoza, Hiroshi A.
Ashall, Daniel T.
Yin, Allen S.
Baldo, Marc A.
Bahlke, Matthias Erhard
author_sort Mendoza, Hiroshi A.
collection MIT
description To address the incompatibility of organic semiconductors with traditional photolithography, an inert, frozen CO[subscript 2] resist is demonstrated that forms an in situ shadow mask. Contact with a room-temperature micro-featured stamp is used to pattern the resist. After thin film deposition, the remaining CO[subscript 2] is sublimed to lift off unwanted material. Pixel densities of 325 pixels-per-inch are shown.
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spelling mit-1721.1/828812022-09-27T23:49:37Z Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO[subscript 2] Resists Mendoza, Hiroshi A. Ashall, Daniel T. Yin, Allen S. Baldo, Marc A. Bahlke, Matthias Erhard Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Bahlke, Matthias Erhard Mendoza, Hiroshi A. Yin, Allen S. Baldo, Marc A. To address the incompatibility of organic semiconductors with traditional photolithography, an inert, frozen CO[subscript 2] resist is demonstrated that forms an in situ shadow mask. Contact with a room-temperature micro-featured stamp is used to pattern the resist. After thin film deposition, the remaining CO[subscript 2] is sublimed to lift off unwanted material. Pixel densities of 325 pixels-per-inch are shown. United States. Dept. of Energy. Office of Basic Energy Sciences (Award DE-SC0001088) MIT Energy Initiative (Graduate Fellowship in Energy) 2013-12-09T14:17:24Z 2013-12-09T14:17:24Z 2012-09 2012-08 Article http://purl.org/eprint/type/JournalArticle 09359648 1521-4095 http://hdl.handle.net/1721.1/82881 Bahlke, Matthias E., Hiroshi A. Mendoza, Daniel T. Ashall, Allen S. Yin, and Marc A. Baldo. “Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO2 Resists.” Advanced Materials 24, no. 46 (December 4, 2012): 6136-6140. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim https://orcid.org/0000-0003-2201-5257 en_US http://dx.doi.org/10.1002/adma.201202446 Advanced Materials http://creativecommons.org/licenses/by/2.5/ application/pdf Wiley Blackwell PMC
spellingShingle Mendoza, Hiroshi A.
Ashall, Daniel T.
Yin, Allen S.
Baldo, Marc A.
Bahlke, Matthias Erhard
Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO[subscript 2] Resists
title Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO[subscript 2] Resists
title_full Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO[subscript 2] Resists
title_fullStr Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO[subscript 2] Resists
title_full_unstemmed Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO[subscript 2] Resists
title_short Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO[subscript 2] Resists
title_sort dry lithography of large area thin film organic semiconductors using frozen co subscript 2 resists
url http://hdl.handle.net/1721.1/82881
https://orcid.org/0000-0003-2201-5257
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