High mobility strained Si/SiGe heterostructure MOSFETs : channel engineering and virtual substrate optimization

High mobility strained Si/SiGe heterostructure MOSFETs : channel engineering and virtual substrate optimization

Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2002.

Bibliographic Details
Main Author: Leitz, Christopher W. (Christopher William), 1976-
Other Authors: Eugene A. Fitzgerald.
Format: Thesis
Language:eng
Published: Massachusetts Institute of Technology 2005
Subjects:
Materials Science and Engineering.
Online Access:http://hdl.handle.net/1721.1/8440

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