L[subscript g] = 60 nm recessed In[subscript 0.7]Ga[subscript 0.3]As metal-oxide-semiconductor field-effect transistors with Al[subscript 2]O[subscript 3] insulator

L[subscript g] = 60 nm recessed In[subscript 0.7]Ga[subscript 0.3]As metal-oxide-semiconductor field-effect transistors with Al[subscript 2]O[subscript 3] insulator

In this Letter, we report on sub-100 nm recessed In[subscript 0.7]Ga[subscript 0.3]As metal-oxide-semiconductorfield-effect transistors(MOSFETs) with outstanding logic and high-frequency performance. The device features ex-situ atomic-layer-deposition (ALD) 2-nm Al[subscript 2]O[subscript 3] layer o...

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Bibliographic Details
Main Authors: Kim, D.-H., Li, J., Kuo, J.-M., Pinsukanjana, P., Kao, Y.-C., Chen, P., Papavasiliou, A., King, C., Regan, E., Urteaga, M., Brar, B., Kim, T.-W., del Alamo, Jesus A., Antoniadis, Dimitri A.
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: American Institute of Physics (AIP) 2014
Online Access:http://hdl.handle.net/1721.1/85946
https://orcid.org/0000-0002-4836-6525

Internet

http://hdl.handle.net/1721.1/85946
https://orcid.org/0000-0002-4836-6525

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