L[subscript g] = 60 nm recessed In[subscript 0.7]Ga[subscript 0.3]As metal-oxide-semiconductor field-effect transistors with Al[subscript 2]O[subscript 3] insulator
In this Letter, we report on sub-100 nm recessed In[subscript 0.7]Ga[subscript 0.3]As metal-oxide-semiconductorfield-effect transistors(MOSFETs) with outstanding logic and high-frequency performance. The device features ex-situ atomic-layer-deposition (ALD) 2-nm Al[subscript 2]O[subscript 3] layer o...
| Main Authors: | , , , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2014
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| Online Access: | http://hdl.handle.net/1721.1/85946 https://orcid.org/0000-0002-4836-6525 |
| Summary: | In this Letter, we report on sub-100 nm recessed In[subscript 0.7]Ga[subscript 0.3]As metal-oxide-semiconductorfield-effect transistors(MOSFETs) with outstanding logic and high-frequency performance. The device features ex-situ atomic-layer-deposition (ALD) 2-nm Al[subscript 2]O[subscript 3] layer on a molecular-beam-epitaxy (MBE) 1-nm InP layer and is fabricated through a triple-recess process. An L[subscript g] = 60 nm MOSFET exhibits on-resistance (R[subscript ON]) = 220 Ω-μm, subthreshold-swing (S) = 110 mV/decade, and drain-induced-barrier-lowering (DIBL) = 200 mV/V at V[subscript DS] = 0.5 V, together with enhancement-mode operation. More importantly, this device displays record maximum transconductance (g[subscript m_max]) = 2000 μs/μm and current-gain cutoff frequency (f[subscript T]) = 370 GHz at V[subscript DS] = 0.5 V, in any III-VMOSFET technology. |
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