Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs
A simulation methodology for ultra-scaled InAs quantum well field-effect transistors (QWFETs) is presented and used to provide design guidelines and a path to improve device performance. A multiscale modeling approach is adopted, where strain is computed in an atomistic valence-force-field method, a...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2014
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| Online Access: | http://hdl.handle.net/1721.1/86094 |