Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

The two-dimensional spatial distribution of structural degradation of AlGaN/GaN high electron mobility transistors was investigated under high-power electrical stressing using atomic force and scanning electron microscopy. It was found that pits form on the surface of the GaN cap layer at the edges...

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Bibliographic Details
Main Authors: Li, Libing, Joh, Jungwoo, Thompson, Carl V., del Alamo, Jesus A.
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: American Institute of Physics (AIP) 2014
Online Access:http://hdl.handle.net/1721.1/86121
https://orcid.org/0000-0002-0121-8285

Internet

http://hdl.handle.net/1721.1/86121
https://orcid.org/0000-0002-0121-8285

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