The High-Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects
2010 marked the 30th anniversary of the High-Electron Mobility Transistor (HEMT). The HEMT represented a triumph for the, at the time, relatively new concept of bandgap engineering and nascent molecular beam epitaxy technology. The HEMT showcased the outstanding electron transport characteristics of...
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CS ManTech
2014
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Online dostop: | http://hdl.handle.net/1721.1/87102 |