The High-Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects

2010 marked the 30th anniversary of the High-Electron Mobility Transistor (HEMT). The HEMT represented a triumph for the, at the time, relatively new concept of bandgap engineering and nascent molecular beam epitaxy technology. The HEMT showcased the outstanding electron transport characteristics of...

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Bibliografske podrobnosti
Glavni avtor: del Alamo, Jesus A.
Drugi avtorji: Massachusetts Institute of Technology. Microsystems Technology Laboratories
Format: Article
Jezik:en_US
Izdano: CS ManTech 2014
Online dostop:http://hdl.handle.net/1721.1/87102