Observation of suppressed terahertz absorption in photoexcited graphene

Observation of suppressed terahertz absorption in photoexcited graphene

When light is absorbed by a semiconductor, photoexcited charge carriers enhance the absorption of far-infrared radiation due to intraband transitions. We observe the opposite behavior in monolayer graphene, a zero-gap semiconductor with linear dispersion. By using time domain terahertz (THz) spectro...

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Bibliographic Details
Main Authors: Frenzel, Alex James, Lui, Chun Hung, Fang, Wenjing, Nair, Nityan L., Herring, Patrick Kenichi, Jarillo-Herrero, Pablo, Kong, Jing, Gedik, Nuh
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: American Institute of Physics (AIP) 2014
Online Access:http://hdl.handle.net/1721.1/87105
https://orcid.org/0000-0002-3416-3962
https://orcid.org/0000-0002-6394-4987
https://orcid.org/0000-0003-0551-1208
https://orcid.org/0000-0002-7406-5283
https://orcid.org/0000-0001-8217-8213

Internet

http://hdl.handle.net/1721.1/87105
https://orcid.org/0000-0002-3416-3962
https://orcid.org/0000-0002-6394-4987
https://orcid.org/0000-0003-0551-1208
https://orcid.org/0000-0002-7406-5283
https://orcid.org/0000-0001-8217-8213

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