Observation of suppressed terahertz absorption in photoexcited graphene
When light is absorbed by a semiconductor, photoexcited charge carriers enhance the absorption of far-infrared radiation due to intraband transitions. We observe the opposite behavior in monolayer graphene, a zero-gap semiconductor with linear dispersion. By using time domain terahertz (THz) spectro...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2014
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| Online Access: | http://hdl.handle.net/1721.1/87105 https://orcid.org/0000-0002-3416-3962 https://orcid.org/0000-0002-6394-4987 https://orcid.org/0000-0003-0551-1208 https://orcid.org/0000-0002-7406-5283 https://orcid.org/0000-0001-8217-8213 |