Large-scale 2D electronics based on single-layer MoS[subscript 2] grown by chemical vapor deposition
2D nanoelectronics based on single-layer MoS[subscript 2] offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS[subscript 2] and fabrication of integrated devices and circuits for the first time. Fundamental bui...
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers (IEEE)
2014
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| Online Access: | http://hdl.handle.net/1721.1/87106 https://orcid.org/0000-0002-3416-3962 https://orcid.org/0000-0001-5777-8364 https://orcid.org/0000-0003-0551-1208 https://orcid.org/0000-0002-2190-563X |
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| author | Wang, H. Yu, L. Lee, Y.-H. Fang, W. Hsu, Allen Long Chin, M. Dubey, Madan Li, L.-J. Kong, Jing Herring, Patrick Kenichi Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Wang, H. Yu, L. Lee, Y.-H. Fang, W. Hsu, Allen Long Chin, M. Dubey, Madan Li, L.-J. Kong, Jing Herring, Patrick Kenichi Palacios, Tomas |
| author_sort | Wang, H. |
| collection | MIT |
| description | 2D nanoelectronics based on single-layer MoS[subscript 2] offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS[subscript 2] and fabrication of integrated devices and circuits for the first time. Fundamental building blocks of digital electronics, such as inverters and NAND gates, are fabricated to demonstrate its capability for logic applications. |
| first_indexed | 2024-09-23T14:53:57Z |
| format | Article |
| id | mit-1721.1/87106 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T14:53:57Z |
| publishDate | 2014 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/871062022-09-29T11:18:23Z Large-scale 2D electronics based on single-layer MoS[subscript 2] grown by chemical vapor deposition Wang, H. Yu, L. Lee, Y.-H. Fang, W. Hsu, Allen Long Chin, M. Dubey, Madan Li, L.-J. Kong, Jing Herring, Patrick Kenichi Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Physics Massachusetts Institute of Technology. Microsystems Technology Laboratories Wang, H. Yu, L. Lee, Y.-H. Fang, W. Hsu, Allen Long Herring, Patrick Kenichi Kong, Jing Palacios, Tomas 2D nanoelectronics based on single-layer MoS[subscript 2] offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS[subscript 2] and fabrication of integrated devices and circuits for the first time. Fundamental building blocks of digital electronics, such as inverters and NAND gates, are fabricated to demonstrate its capability for logic applications. United States. Office of Naval Research. Young Investigator Program U.S. Army Research Laboratory 2014-05-22T18:49:20Z 2014-05-22T18:49:20Z 2012-12 Article http://purl.org/eprint/type/ConferencePaper 978-1-4673-4871-3 978-1-4673-4872-0 978-1-4673-4870-6 http://hdl.handle.net/1721.1/87106 Wang, H., L. Yu, Y.-H. Lee, W. Fang, A. Hsu, P. Herring, M. Chin, et al. “Large-Scale 2D Electronics Based on Single-Layer MoS<inf>2</inf> Grown by Chemical Vapor Deposition.” 2012 International Electron Devices Meeting (n.d.). https://orcid.org/0000-0002-3416-3962 https://orcid.org/0000-0001-5777-8364 https://orcid.org/0000-0003-0551-1208 https://orcid.org/0000-0002-2190-563X en_US http://dx.doi.org/10.1109/IEDM.2012.6478980 Proceedings of the 2012 International Electron Devices Meeting (IEDM) Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) arXiv |
| spellingShingle | Wang, H. Yu, L. Lee, Y.-H. Fang, W. Hsu, Allen Long Chin, M. Dubey, Madan Li, L.-J. Kong, Jing Herring, Patrick Kenichi Palacios, Tomas Large-scale 2D electronics based on single-layer MoS[subscript 2] grown by chemical vapor deposition |
| title | Large-scale 2D electronics based on single-layer MoS[subscript 2] grown by chemical vapor deposition |
| title_full | Large-scale 2D electronics based on single-layer MoS[subscript 2] grown by chemical vapor deposition |
| title_fullStr | Large-scale 2D electronics based on single-layer MoS[subscript 2] grown by chemical vapor deposition |
| title_full_unstemmed | Large-scale 2D electronics based on single-layer MoS[subscript 2] grown by chemical vapor deposition |
| title_short | Large-scale 2D electronics based on single-layer MoS[subscript 2] grown by chemical vapor deposition |
| title_sort | large scale 2d electronics based on single layer mos subscript 2 grown by chemical vapor deposition |
| url | http://hdl.handle.net/1721.1/87106 https://orcid.org/0000-0002-3416-3962 https://orcid.org/0000-0001-5777-8364 https://orcid.org/0000-0003-0551-1208 https://orcid.org/0000-0002-2190-563X |
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