Study of transport properties in graphene monolayer flakes on SiO[sub 2] substrates

We investigate the carrier mobility in monolayer and bilayer graphene with a top HfO2dielectric, as a function of the HfO2film thickness and temperature. The results show that the carrier mobility decreases during the deposition of the first 2–4 nm of top dielectric and remains constant for thicker...

Full description

Bibliographic Details
Main Authors: Tirado, J. M., Nezich, Daniel A., Zhao, X., Chung, J. W., Kong, Jing, Palacios, Tomas
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: American Institute of Physics/American Vacuum Society 2014
Online Access:http://hdl.handle.net/1721.1/87120
https://orcid.org/0000-0003-0551-1208
https://orcid.org/0000-0002-2190-563X