Study of transport properties in graphene monolayer flakes on SiO[sub 2] substrates

We investigate the carrier mobility in monolayer and bilayer graphene with a top HfO2dielectric, as a function of the HfO2film thickness and temperature. The results show that the carrier mobility decreases during the deposition of the first 2–4 nm of top dielectric and remains constant for thicker...

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التفاصيل البيبلوغرافية
المؤلفون الرئيسيون: Tirado, J. M., Nezich, Daniel A., Zhao, X., Chung, J. W., Kong, Jing, Palacios, Tomas
مؤلفون آخرون: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
التنسيق: مقال
اللغة:en_US
منشور في: American Institute of Physics/American Vacuum Society 2014
الوصول للمادة أونلاين:http://hdl.handle.net/1721.1/87120
https://orcid.org/0000-0003-0551-1208
https://orcid.org/0000-0002-2190-563X