Study of transport properties in graphene monolayer flakes on SiO[sub 2] substrates
We investigate the carrier mobility in monolayer and bilayer graphene with a top HfO2dielectric, as a function of the HfO2film thickness and temperature. The results show that the carrier mobility decreases during the deposition of the first 2–4 nm of top dielectric and remains constant for thicker...
| المؤلفون الرئيسيون: | , , , , , |
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| مؤلفون آخرون: | |
| التنسيق: | مقال |
| اللغة: | en_US |
| منشور في: |
American Institute of Physics/American Vacuum Society
2014
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| الوصول للمادة أونلاين: | http://hdl.handle.net/1721.1/87120 https://orcid.org/0000-0003-0551-1208 https://orcid.org/0000-0002-2190-563X |