Hot Carrier-Assisted Intrinsic Photoresponse in Graphene

Hot Carrier-Assisted Intrinsic Photoresponse in Graphene

We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation (of wavelength 850 nanometers) at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltage...

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Bibliographic Details
Main Authors: Gabor, Nathaniel M., Song, Justin Chien Wen, Ma, Qiong, Nair, Nityan L., Taychatanapat, Thiti, Levitov, Leonid, Jarillo-Herrero, Pablo, Watanabe, Kenji, Taniguchi, Takashi
Other Authors: Massachusetts Institute of Technology. Department of Physics
Format: Article
Language:en_US
Published: American Association for the Advancement of Science (AAAS) 2014
Online Access:http://hdl.handle.net/1721.1/88466
https://orcid.org/0000-0002-4268-731X
https://orcid.org/0000-0002-5103-6973
https://orcid.org/0000-0001-8217-8213

Internet

http://hdl.handle.net/1721.1/88466
https://orcid.org/0000-0002-4268-731X
https://orcid.org/0000-0002-5103-6973
https://orcid.org/0000-0001-8217-8213

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