Hot Carrier-Assisted Intrinsic Photoresponse in Graphene
We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation (of wavelength 850 nanometers) at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltage...
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| Format: | Article |
| Language: | en_US |
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American Association for the Advancement of Science (AAAS)
2014
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| Online Access: | http://hdl.handle.net/1721.1/88466 https://orcid.org/0000-0002-4268-731X https://orcid.org/0000-0002-5103-6973 https://orcid.org/0000-0001-8217-8213 |
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| author | Gabor, Nathaniel M. Song, Justin Chien Wen Ma, Qiong Nair, Nityan L. Taychatanapat, Thiti Levitov, Leonid Jarillo-Herrero, Pablo Watanabe, Kenji Taniguchi, Takashi |
| author2 | Massachusetts Institute of Technology. Department of Physics |
| author_facet | Massachusetts Institute of Technology. Department of Physics Gabor, Nathaniel M. Song, Justin Chien Wen Ma, Qiong Nair, Nityan L. Taychatanapat, Thiti Levitov, Leonid Jarillo-Herrero, Pablo Watanabe, Kenji Taniguchi, Takashi |
| author_sort | Gabor, Nathaniel M. |
| collection | MIT |
| description | We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation (of wavelength 850 nanometers) at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltages. These patterns, together with the measured spatial and density dependence of the photoresponse, provide strong evidence that nonlocal hot carrier transport, rather than the photovoltaic effect, dominates the intrinsic photoresponse in graphene. This regime, which features a long-lived and spatially distributed hot carrier population, may offer a path to hot carrier–assisted thermoelectric technologies for efficient solar energy harvesting. |
| first_indexed | 2024-09-23T13:13:54Z |
| format | Article |
| id | mit-1721.1/88466 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T13:13:54Z |
| publishDate | 2014 |
| publisher | American Association for the Advancement of Science (AAAS) |
| record_format | dspace |
| spelling | mit-1721.1/884662022-09-28T12:47:06Z Hot Carrier-Assisted Intrinsic Photoresponse in Graphene Gabor, Nathaniel M. Song, Justin Chien Wen Ma, Qiong Nair, Nityan L. Taychatanapat, Thiti Levitov, Leonid Jarillo-Herrero, Pablo Watanabe, Kenji Taniguchi, Takashi Massachusetts Institute of Technology. Department of Physics Gabor, Nathaniel M. Song, Justin Chien Wen Ma, Qiong Nair, Nityan L. Taychatanapat, Thiti Levitov, Leonid Jarillo-Herrero, Pablo We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation (of wavelength 850 nanometers) at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltages. These patterns, together with the measured spatial and density dependence of the photoresponse, provide strong evidence that nonlocal hot carrier transport, rather than the photovoltaic effect, dominates the intrinsic photoresponse in graphene. This regime, which features a long-lived and spatially distributed hot carrier population, may offer a path to hot carrier–assisted thermoelectric technologies for efficient solar energy harvesting. National Science Foundation (U.S.) (Early Career Award) David & Lucile Packard Foundation United States. Air Force Office of Scientific Research 2014-07-22T15:07:38Z 2014-07-22T15:07:38Z 2011-10 2011-07 Article http://purl.org/eprint/type/JournalArticle 0036-8075 1095-9203 http://hdl.handle.net/1721.1/88466 Gabor, N. M., J. C. W. Song, Q. Ma, N. L. Nair, T. Taychatanapat, K. Watanabe, T. Taniguchi, L. S. Levitov, and P. Jarillo-Herrero. “Hot Carrier-Assisted Intrinsic Photoresponse in Graphene.” Science 334, no. 6056 (November 4, 2011): 648–652. https://orcid.org/0000-0002-4268-731X https://orcid.org/0000-0002-5103-6973 https://orcid.org/0000-0001-8217-8213 en_US http://dx.doi.org/10.1126/science.1211384 Science Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Association for the Advancement of Science (AAAS) arXiv |
| spellingShingle | Gabor, Nathaniel M. Song, Justin Chien Wen Ma, Qiong Nair, Nityan L. Taychatanapat, Thiti Levitov, Leonid Jarillo-Herrero, Pablo Watanabe, Kenji Taniguchi, Takashi Hot Carrier-Assisted Intrinsic Photoresponse in Graphene |
| title | Hot Carrier-Assisted Intrinsic Photoresponse in Graphene |
| title_full | Hot Carrier-Assisted Intrinsic Photoresponse in Graphene |
| title_fullStr | Hot Carrier-Assisted Intrinsic Photoresponse in Graphene |
| title_full_unstemmed | Hot Carrier-Assisted Intrinsic Photoresponse in Graphene |
| title_short | Hot Carrier-Assisted Intrinsic Photoresponse in Graphene |
| title_sort | hot carrier assisted intrinsic photoresponse in graphene |
| url | http://hdl.handle.net/1721.1/88466 https://orcid.org/0000-0002-4268-731X https://orcid.org/0000-0002-5103-6973 https://orcid.org/0000-0001-8217-8213 |
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