Origins of hole traps in hydrogenated nanocrystalline and amorphous silicon revealed through machine learning
Genetic programming is used to identify the structural features most strongly associated with hole traps in hydrogenated nanocrystalline silicon with very low crystalline volume fraction. The genetic programming algorithm reveals that hole traps are most strongly associated with local structures wit...
| Main Authors: | , , |
|---|---|
| מחברים אחרים: | |
| פורמט: | Article |
| שפה: | en_US |
| יצא לאור: |
American Physical Society
2014
|
| גישה מקוונת: | http://hdl.handle.net/1721.1/88769 https://orcid.org/0000-0003-1281-2359 |