Origins of hole traps in hydrogenated nanocrystalline and amorphous silicon revealed through machine learning

Genetic programming is used to identify the structural features most strongly associated with hole traps in hydrogenated nanocrystalline silicon with very low crystalline volume fraction. The genetic programming algorithm reveals that hole traps are most strongly associated with local structures wit...

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Bibliographic Details
Main Authors: Mueller, Timothy K., Grossman, Jeffrey C., Johlin, Eric Carl
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: American Physical Society 2014
Online Access:http://hdl.handle.net/1721.1/88769
https://orcid.org/0000-0003-1281-2359