Hole-mobility-limiting atomic structures in hydrogenated amorphous silicon

Hole-mobility-limiting atomic structures in hydrogenated amorphous silicon

Low hole mobility currently limits the efficiency of amorphous silicon photovoltaic devices. We explore three possible phenomena contributing to this low mobility: coordination defects, self-trapping ionization displacement defects, and lattice expansion allowing for hole wave-function delocalizatio...

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Bibliographic Details
Main Authors: Buonassisi, Tonio, Grossman, Jeffrey C., Johlin, Eric Carl, Simmons, Christie B.
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:English
Published: American Physical Society 2014
Online Access:http://hdl.handle.net/1721.1/89217
https://orcid.org/0000-0003-1281-2359
https://orcid.org/0000-0001-8345-4937

Internet

http://hdl.handle.net/1721.1/89217
https://orcid.org/0000-0003-1281-2359
https://orcid.org/0000-0001-8345-4937

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