Optimization of Integrated Transistors for Very High Frequency DC-DC Converters
This paper presents a method to optimize integrated lateral double-diffused MOSFET transistors for use in very high frequency (VHF, 30-300 MHz) dc-dc converters. A transistor model valid at VHF switching frequencies is developed. Device parameters are related to layout geometry and the resulting lay...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2014
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| Online Access: | http://hdl.handle.net/1721.1/90546 https://orcid.org/0000-0002-0746-6191 |