2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly used metal electrodes. As a result, this transducer can be used for both th...

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Main Authors: Weinstein, Dana, Popa, Laura Cornelia
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers (IEEE) 2014
Online Access:http://hdl.handle.net/1721.1/91022
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author Weinstein, Dana
Popa, Laura Cornelia
author2 Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
author_facet Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Weinstein, Dana
Popa, Laura Cornelia
author_sort Weinstein, Dana
collection MIT
description A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly used metal electrodes. As a result, this transducer can be used for both the direct interrogation of GaN electromechanical properties and the realization of high Q resonators. A 1.2 GHz bulk acoustic resonator with mechanical Q of 1885 is demonstrated, with frequency quality factor product (f·Q) of 2.3×10[superscript 12], the highest measured in GaN to date.
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spelling mit-1721.1/910222022-09-29T09:05:56Z 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators Weinstein, Dana Popa, Laura Cornelia Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Physics Popa, Laura Cornelia Weinstein, Dana A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly used metal electrodes. As a result, this transducer can be used for both the direct interrogation of GaN electromechanical properties and the realization of high Q resonators. A 1.2 GHz bulk acoustic resonator with mechanical Q of 1885 is demonstrated, with frequency quality factor product (f·Q) of 2.3×10[superscript 12], the highest measured in GaN to date. 2014-10-21T15:07:48Z 2014-10-21T15:07:48Z 2013-07 Article http://purl.org/eprint/type/ConferencePaper 978-1-4799-0342-9 http://hdl.handle.net/1721.1/91022 Popa, Laura C., and Dana Weinstein. “2DEG Electrodes for Piezoelectric Transduction of AlGaN/GaN MEMS Resonators.” 2013 Joint European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC) (July 2013). en_US http://dx.doi.org/10.1109/EFTF-IFC.2013.6702242 Proceedings of the 2013 Joint European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC) Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) MIT web domain
spellingShingle Weinstein, Dana
Popa, Laura Cornelia
2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators
title 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators
title_full 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators
title_fullStr 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators
title_full_unstemmed 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators
title_short 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators
title_sort 2deg electrodes for piezoelectric transduction of algan gan mems resonators
url http://hdl.handle.net/1721.1/91022
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