Silicon CMOS Ohmic Contact Technology for Contacting III-V Compound Materials

Silicon CMOS Ohmic Contact Technology for Contacting III-V Compound Materials

Silicon (Si)-encapsulated III-V compound (III-V) device layers enable Si-complementary metal-oxide semiconductor (CMOS) friendly ohmic contact formation to III-V compound devices, allowing for the ultimate seamless planar integration of III-V and Si CMOS devices in a common fabrication infrastructur...

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Bibliographic Details
Main Authors: Pacella, Nan Y., Mukherjee, Kunal, Bulsara, Mayank, Fitzgerald, Eugene A.
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: 2014
Online Access:http://hdl.handle.net/1721.1/91707
https://orcid.org/0000-0002-1891-1959
https://orcid.org/0000-0002-2796-856X

Internet

http://hdl.handle.net/1721.1/91707
https://orcid.org/0000-0002-1891-1959
https://orcid.org/0000-0002-2796-856X

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