Amber-green light-emitting diodes using order-disorder Al[subscript x]In[subscript 1−x]P heterostructures
We demonstrate amber-green emission from Al[subscript x]In[subscript 1– x]P light-emitting diodes (LEDs) with luminescence peaked at 566 nm and 600 nm. The LEDs are metamorphically grown on GaAs substrates via a graded In[subscript y]Ga[subscript 1– y]As buffer layer and feature electron confinement...
| Main Authors: | , , , , , |
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| 其他作者: | |
| 格式: | 文件 |
| 语言: | en_US |
| 出版: |
American Institute of Physics (AIP)
2014
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| 在线阅读: | http://hdl.handle.net/1721.1/91914 https://orcid.org/0000-0002-1891-1959 https://orcid.org/0000-0002-2796-856X |