Amber-green light-emitting diodes using order-disorder Al[subscript x]In[subscript 1−x]P heterostructures

Amber-green light-emitting diodes using order-disorder Al[subscript x]In[subscript 1−x]P heterostructures

We demonstrate amber-green emission from Al[subscript x]In[subscript 1– x]P light-emitting diodes (LEDs) with luminescence peaked at 566 nm and 600 nm. The LEDs are metamorphically grown on GaAs substrates via a graded In[subscript y]Ga[subscript 1– y]As buffer layer and feature electron confinement...

Full description

Bibliographic Details
Main Authors: Christian, Theresa M., Beaton, Daniel A., Mukherjee, Kunal, Alberi, Kirstin, Fitzgerald, Eugene A., Mascarenhas, Angelo
Other Authors: MIT Materials Research Laboratory
Format: Article
Language:en_US
Published: American Institute of Physics (AIP) 2014
Online Access:http://hdl.handle.net/1721.1/91914
https://orcid.org/0000-0002-1891-1959
https://orcid.org/0000-0002-2796-856X

Internet

http://hdl.handle.net/1721.1/91914
https://orcid.org/0000-0002-1891-1959
https://orcid.org/0000-0002-2796-856X

Similar Items