Microstructure and conductance-slope of InAs/GaSb tunnel diodes
InAs/GaSb and similar materials systems have generated great interest as a heterojunction for tunnel field effect transistors (TFETs) due to favorable band alignment. However, little is currently understood about how such TFETs are affected by materials defects and nonidealities. We present measurem...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2014
|
| Online Access: | http://hdl.handle.net/1721.1/91915 https://orcid.org/0000-0002-1891-1959 https://orcid.org/0000-0001-6823-3837 |