High mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor structures
In this paper, we demonstrate high electron mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor(MOSFET)structures. The Al[subscript 2]O[subscript 3] (gate dielectric)/In[subscript 0.53]Ga[subscript 0.47]As-In[subscript 0.52]Al[subscript 0.48...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2014
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| Online Access: | http://hdl.handle.net/1721.1/91922 https://orcid.org/0000-0002-1891-1959 |