High mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor structures
In this paper, we demonstrate high electron mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor(MOSFET)structures. The Al[subscript 2]O[subscript 3] (gate dielectric)/In[subscript 0.53]Ga[subscript 0.47]As-In[subscript 0.52]Al[subscript 0.48...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2014
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| Online Access: | http://hdl.handle.net/1721.1/91922 https://orcid.org/0000-0002-1891-1959 |
| Summary: | In this paper, we demonstrate high electron mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor(MOSFET)structures. The Al[subscript 2]O[subscript 3] (gate dielectric)/In[subscript 0.53]Ga[subscript 0.47]As-In[subscript 0.52]Al[subscript 0.48]As (barrier)/In[subscript 0.53]Ga[subscript 0.47]As (channel) structures were fabricated, and the mobility was obtained by Hall measurements. The structures with in-situchemical vapor deposition(CVD)Al[subscript 2]O[subscript 3] displayed higher mobility than identical structures fabricated with in situ atomic layer deposition Al[subscript 2]O[subscript 3], which indicates that CVD process resulted in a lower Al[subscript 2]O[subscript 3]/In[subscript 0.53]Ga[subscript 0.47]As interfacial defect density. A gate bias was applied to the structure with CVDAl[subscript 2]O[subscript 3], and a peak mobility of 9243 cm[superscript 2]/V s at a carrier density of 2.7 × 10[superscript 12] cm[superscript −2] was demonstrated for the structure with a 4 nm In[subscript 0.53]Ga[subscript 0.47]As-In[subscript 0.52]Al[subscript 0.48]As barrier. A model based on internal phonon scattering and interfacial defect coulomb scattering was developed to explain the experimental data and predict the mobility of In[subscript 0.53]Ga[subscript 0.47]As MOSFETstructures. |
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